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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT NPN Silicon Transistor VOLTAGE 50Volts APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. CHT5946PT CURRENT 5 Ampere FEATURE * Surface mount package. (SC-59/SOT-346) * Suitable for high packing density. SC-59/SOT-346 CONSTRUCTION *NPN Silicon Transistor 1.7~2.1 (2) (3) 0.95 2.7~3.1 0.95 (1) 0.3~0.51 1.2~1.9 0.89~1.3 0.085~0.2 0.3~0.6 0~0.1 2.1~2.95 CIRCUIT (1) B C (3) E(2) Dimensions in millimeters SC-59/SOT-346 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) Tamb 25 C; note 1 Tamb 25 C; note 2 CONDITIONS open emitter open base open collector - - - - - - -55 - 40 -55 MIN. MAX. 80 50 6 5 300 625 +150 150 +150 V V V A mW mW C C C 2005-11 UNIT Ptot Tstg Tj Tamb Note total power dissipation storage temperature junction temperature operating ambient temperature 1. Transistor mounted on an FR4 printed-circuit board. 2. Maximum power dissipation is calcuming that the device is mounted on a ceramic substrate measuring 15x15x0.6mm RATING CHARACTERISTIC CURVES ( CHT5946PT ) THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-c PARAMETER thermal resistance from junction to ambien thermal resistance from junction to case CONDITIONS note 2 note 2 VALUE 200 115 UNIT C/W C/W CHARACTERISTICS Tamb = 25 C unless otherwise specied. SYMBOL ICBO ICEO IEBO hFE PARAMETER collector cut-off current collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage base-emitter saturation voltage CONDITIONS VCB = 80V,IE=0 VCE=40V,IB=0 VEB=6V ,IC=0 IC = 10 mA; VCE = 2V IC = 500 mA; VCE =2V IC = 1 0 00 mA; IB = 50 m A IC = 2 0 00 mA; IB = 100 m A IC = 2 0 00 mA; IB = 50 m A IE = 0 ; VCB = 1 0 V; f = 1 M H Z IC = -500 mA; VCE = 1 0 V; MIN. - - - 200 200 - - - MAX. 0.5 0.5 0.5 600 560 0.14 0.24 1.0 - - V V V pF MHz UNIT uA uA uA VCE(sat) VBE(sat) Cob fT collector output capacitance transition frequency 15(typ) 400(typ) Note : Pulse test: tp 300uSec; 0.02. RATING CHARACTERISTIC CURVES ( CHT5946PT ) DC Current Gain vs Collector Current 1000 Collector Emitter Saturation Voltage vs cOllector Current 10000 IC/IB = 20 DC CURRENT GAIN VCE(sat) COLLECTOR EMITTER SATURATION VOLTAGE ( mV ) 1000 100 100 hFE 10 0.01 0.1 1 10 10 0.01 0.1 1 10 IC COLLECTOR CURRENT ( A ) IC COLLECTOR CURRENT ( A ) Base Emitter Saturation Voltage vs cOllector Current 1000 Transistion Frequencyvs Emitter Current VBE(sat) BASE EMITTER SATURATION VOLTAGE ( mV ) IC/IB = 50 TRANSITION FREQUENCY ( MHz ) 10000 VCE = 10V 1000 100 fT 100 0.01 IC 0.1 1 10 10 0.01 0.1 1 COLLECTOR CURRENT ( A ) IE EMITTER CURRENT ( -A ) Output Capactance vs Reverse Biae Voltage 1000 Power Dissipation vs Operating Ambient Temperature 800 OUTPUT CAPACITANCE ( pF ) f = 1MHz Power Dissipation (mW) 700 600 500 400 300 200 100 100 10 Cob 1 0.1 1 10 100 0 0 20 40 60 80 100 120 140 160 VCB REVERSE BIAS VOLTAGE ( V ) Operating Ambient Temperature ( C) |
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